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Recently, engineers at the University of California, Berkeley, described a major breakthrough in the design of transistors (tiny electronic switches that make up computer building blocks) that can dramatically reduce their energy consumption without sacrificing speed, size, or performance. This element is called the gate oxide layer, which plays a key role in the switching of transistors.
In this study, the team could also achieve negative capacitance by combining hafnium oxide and zirconia in an engineered crystal structure called a superlattice, and also allowed both ferroelectricity and antiferroelectricity to exist at the same time. It was found that these transistors required about 30% less voltage than existing transistors, while maintaining the semiconductor industry's benchmark without sacrificing reliability.
This test of the new application of zirconia further shows that the development potential of Zirconia Ceramic Components is huge. The traditional application of zirconia is mainly made to Zirconia ceramic shafts,zirconia ceramic structural component, as a raw material for refractories, coatings and glazes, etc., with the in-depth understanding of the thermodynamic and electrical properties of Zirconia Ceramics, it is possible to be widely used as a high-performance structural ceramic and solid dielectric material.
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